APPLIED PHYSICS LETTERS 101, Comparative study of solution-processed carbon nanotube network transistors Sung-Jin Choi, Chuan Wang, Cheuk Chi Lo, Patrick Bennett, Ali Javey, and Jeffrey Bokora) Department

Source URL: nano.eecs.berkeley.edu

PRL 103, Selected for a Viewpoint in Physics PHYSICAL REVIEW LETTERS week ending

Source URL: ultracold.rice.edu

LETTERS Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor A. DAS1, S. PISANA2, B. CHAKRABORTY1, S. PISCANEC2, S. K. SAHA1, U. V. WAGHMARE3,

Source URL: www.condmat.physics.manchester.ac.uk

PRL 116, PHYSICAL REVIEW LETTERS week ending 15 JANUARY 2016

Source URL: web.physics.ucsb.edu

• Quantum information science
• Quantum computing
• Quantum error correction
• Qubit
• Flux qubit
• Trapped ion quantum computer

LETTERS PUBLISHED ONLINE: 28 JULY 2013 | DOI: NNANOA valley–spin qubit in a carbon nanotube E. A. Laird†, F. Pei and L. P. Kouwenhoven* Although electron spins in III–V semiconductor quantum dots

Source URL: kouwenhovenlab.tudelft.nl

• Quantum mechanics
• Physics
• Electromagnetism
• Emerging technologies
• Quantum information science
• Quantum electronics
• Quantum computing
• Carbon nanotubes
• Carbon nanotube quantum dot
• Qubit
• Spinorbit interaction
• Carbon nanotube

APPLIED PHYSICS LETTERS 86, Intense switchable fluorescence in light wave coupled electrowetting devices J. Heikenfelda) Extreme Photonix LLC, Cincinnati, Ohio

Source URL: www.nanolab.uc.edu

Accelerated nanoscale magnetic resonance imaging through phase multiplexing B. A. Moores, A. Eichler, Y. Tao, H. Takahashi, P. Navaretti, and C. L. Degen Citation: Applied Physics Letters 106, ); doi:

Source URL: www.spin.ethz.ch

PRL 113, week ending 5 DECEMBERPHYSICAL REVIEW LETTERS

Source URL: physics.bu.edu

APPLIED PHYSICS LETTERS 92, 143309 共2008兲 A nearly ideal phosphor-converted white light-emitting diode Steven C. Allen and Andrew J. Steckla兲 Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio

Source URL: www.nanolab.uc.edu

APPLIED PHYSICS LETTERS 102, High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics Kuniharu Takei,1,2,3 Rehan Kapadia,1,2,3 Hui Fang,1,2,3 E. Plis,4 Sanjay Krishn

Source URL: nano.eecs.berkeley.edu